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FDW2501N
May 2000 PRELIMINARY
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Features
* 6 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5V RDS(ON) = 0.028 @ VGS = 2.5V * Extended VGSS range (12V) for battery applications. * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
1 2 3 4
8 7 6 5
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA =25 oC unless otherwise noted
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
6 30 1.0 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJ A Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
C/W
Package Marking and Ordering Information
Device Marking 2501N Device FDW2501N Reel Size 13'' Tape width 12mm Quantity 3000 units
(c)2000 Fairchild Semiconductor Corporation
FDW2501N Rev C1(W)
FDW2501N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max
Units
V
Off Characteristics
14 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.0 A VGS = 2.5 V, ID = 4.7 A VGS = 4.5 V, ID = 6.0A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 6.0 A
0.4
1.0 -3.5 0.015 0.022 0.021
1.5
V mV/C
0.018 0.028 0.029
ID(on) gFS
30 28
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
1276 558 187
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
10 20 31 16
20 40 60 30 19
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 6.0 A,
13.3 3.0 3.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A
(Note 2)
0.83 0.7 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDW2501N Rev C1(W)
FDW2501N
Typical Characteristics
50 3.5V 3.0V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V I D, DRAIN CURRENT (A) 40 4.0V
1.8
1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 4.5V
30
2.5V
20 2.0V
10
1
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 6 12 18 24 30 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 R DS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =6A VGS = 4.5V
ID = 3 A 0.04
1.4
1.2
0.03
1
0.02
T A = 125 C TA = 25 C
o
o
0.8
0.01
0.6 -50
-25
0
25
50
75
100
o
125
150
0 1 4 7 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 5V 25 I D, DRAIN CURRENT (A) 20 15 10 5 0 0.5 TA = -55 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C 125 C
o
IS , REVERSE DRAIN CURRENT (A)
o
VGS = 0V 10 T A = 125 C 25 C 0.1 -55 C 0.01
o o o
1
0.001 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2501N Rev C1(W)
FDW2501N
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6A 4 15V 3 VDS = 5V 10 V
2000 f = 1MHz VGS = 0 V CAPACITANCE (pF) 1500 CISS
1000 COSS 500
2
1 CRSS 0 0 3 6 9 12 15 Qg , GATE CHARGE (nC) 0 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 1s 1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 208 C/W TA = 25 C 0.01 0.1 1 10 100 0
o o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 208C/W TA = 25C
1ms 10ms 100ms 10s
40
30
20
10
0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
R JA(t) = r(t) + R JA R JA =208 C/W P(pk) t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000
0.01
0.01
SINGLE PULSE
0.001 0.0001 0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2501N Rev C1(W)
TSSOP-8 Package Dimensions
TSSOP-8 (FS PKG Code S4)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.0334
January 2000, Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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